| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| K4A4G085WF-BCTD |
|
存储IC |
SAMSUNG/三星 |
FBGA |
2052+ |
10000 |
||
| STSPIN220 | IC |
ST/意法 |
QFN16 |
1912+ |
3871 |
|||
| H5GC4H24AJR-R0C | 存储IC |
SKHYNIX/海力士 |
FBGA |
18+ |
418 |
|||
| TUSB8044ARGCR | IC |
TI/德州仪器 |
VQFN64 |
21+ |
4000 |
|||
| TFA9894CUK/N1 | NXP/恩智浦 |
WLCSP48 |
1925+ |
1896 |
||||
| MT61K256M32JE-14:A | 存储IC |
MICRON/美光 |
FBGA |
21+ |
337 |
|||
| FPF1203LUCX | IC |
ONSEMI/安森美 |
WLCSP4 |
20+ |
9000 |
|||
| EPM1270F256C5N | IC |
ALTERA/阿尔特拉 |
BGA256 |
1431+ |
58 |
|||
| TCR13AGADJ.LF(S | IC |
TOSHIBA/东芝 |
WCSP6F |
20+ |
20000 |
|||
| K4G80325FC-HC25 | 存储IC |
SAMSUNG/三星 |
FBGA |
21+ |
2092 |
|||
| DA9313-18VK2 | DIALOG/戴乐格 |
BGA |
21+ |
25220 |
||||
| AON6354 | MOS(场效应管) |
AOS/万代 |
DFN |
2025+ |
30000 |
|||
| TLV62568DRLR | TI/德州仪器 |
SOT563-6 |
20+ |
72980 |
||||
| H5TC4G63CFR-PBA | 存储IC |
SKHYNIX/海力士 |
FBGA |
1745+ |
851 |
|||
| KLM8G1GEME-B041 | FLASH存储器 |
SAMSUNG/三星 |
FBGA |
17+ |
2240 |
|||
| MT53E2G32D4NQ-046 WT:A | 存储IC |
MICRON/美光 |
FBGA |
22+ |
600 |
|||
| TC58BVG0S3HBAI4 | 存储IC |
TOSHIBA/东芝 |
BGA |
22+ |
8400 |
|||
| K3UH5H50MM-AGCJ | 存储IC |
SAMSUNG/三星 |
FBGA |
21+ |
1401 |
|||
| M25P32-VMF6TP | 存储IC |
ST/意法 |
SOP-16 |
08+ |
8678 |
|||
| K4Z80325BC-HC16 | 存储IC |
SAMSUNG/三星 |
FBGA |
21+ |
2669 |
商家默认展示20条库存